? 2017 ixys corporation, all rights reserved ds100816c(6/17) n-channel enhancement mode IXFP90N20X3M v dss = 200v i d25 = 90a r ds(on) ? ? ? ? ? 12.8m ? ? ? ? ? features ? international standard package ? plastic overmolded tab ? low r ds(on) and q g ? avalanche rated ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode power supplies ? dc-dc converters ? pfc circuits ? ac and dc motor drives ? robotics and servo controls symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 1.5ma 2.5 4.5 v i gss v gs = ? 20v, v ds = 0v ??????????????????????? 100 na i dss v ds = v dss , v gs = 0v 5 ? a t j = 125 ? c 300 ? a r ds(on) v gs = 10v, i d = 45a, note 1 10.5 12.8 m ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 200 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 200 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c, limited by t jm 90 a i dm t c = 25 ? c, pulse width limited by t jm 220 a i a t c = 25 ? c45a e as t c = 25 ? c 1.5 j dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 20 v/ns p d t c = 25 ? c36w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13 / 10 nm/lb.in weight 2.5 g g = gate d = drain s = source overmolded to-220 g d s (electrically isolated tab) x3-class hiperfet tm power mosfet preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXFP90N20X3M ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 terminals: 1 - gate 2 - drain 3 - source 12 3 overmolded to-220 (ixfp...m) note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v 90 a i sm repetitive, pulse width limited by t jm 360 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 95 ns q rm 360 ???????????? nc i rm 7.6 a i f = 45a, -di/dt = 100a/ s v r = 100v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 45a, note 1 40 67 s r gi gate input resistance 1.4 ? c iss 5420 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 930 pf c rss 4 pf c o(er) 420 pf c o(tr) 1300 pf t d(on) 22 ns t r 26 ns t d(off) 62 ns t f 13 ns q g(on) 78 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 45a 23 nc q gd 22 nc r thjc 3.5 ? c/w r thcs 0.50 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 45a r g = 5 ? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss
? 2017 ixys corporation, all rights reserved IXFP90N20X3M fig. 1. output characteristics @ t j = 25 o c 0 10 20 30 40 50 60 70 80 90 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 3. output characteristics @ t j = 125 o c 0 10 20 30 40 50 60 70 80 90 00.511.522.53 v ds - volts i d - amperes v gs = 10v 8v 4v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 45a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 90a i d = 45a fig. 5. r ds(on) normalized to i d = 45a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 50 100 150 200 250 300 350 400 i d - amperes r ds(on) - normalized v gs = 10v t j = 125 o c t j = 25 o c fig. 2. extended output characteristics @ t j = 25 o c 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 6v 8v 7v 9v fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th)
ixys reserves the right to change limits, test conditions, and dimensions. IXFP90N20X3M fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 40 80 120 160 200 240 i d - amperes g f s - siemens 25 o c 125 o c t j = - 40 o c fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 400 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd - volts i s - amperes t j = 125 o c t j = 25 o c fig. 10. gate charge 0 2 4 6 8 10 0 1020304050607080 q g - nanocoulombs v gs - volts v ds = 100v i d = 45a i g = 10ma fig. 11. capacitance 1 10 100 1000 10000 100000 1 10 100 1000 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 7. input admittance 0 40 80 120 160 200 240 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c fig. 12. output capacitance stored energy 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 140 160 180 200 v ds - volts e oss - microjoules
? 2017 ixys corporation, all rights reserved ixys ref: f_90n20x3(25-s202) 5-31-17-a IXFP90N20X3M fig. 14. maximum transient thermal impedance 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - k / w fig. 13. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1,000 v ds - volts i d - amperes t j = 150 o c t c = 25 o c sin g le pulse 25 s 1ms 100 s r ds( on ) limit 10ms 100ms dc
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